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參數(shù)資料
| 型號： | AOT426 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 74K |
| 代理商： | AOT426 |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
40
1.3
Max
50
2
R
θ
JC
Repetitive avalanche energy L=0.1mH
C
45
75
37.5
A
mJ
Junction and Storage Temperature Range
A
P
D
°C
-55 to 175
T
C
=100°C
Avalanche Current
C
30
I
D
85
62.5
200
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum
30
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
Gate-Source Voltage
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
Steady-State
AOT426
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A
R
DS(ON)
< 6m
(V
GS
= 10V)
R
DS(ON)
< 11m
(V
GS
= 4.5V)
General Description
The AOT426 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOT426 is Pb-free (meets ROHS & Sony
259 specifications). AOT426L is a Green Product
ordering option. AOT426 and AOT426L are
electrically identical.
G
D
S
G D S
TO-220
Alpha & Omega Semiconductor, Ltd.
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PDF描述 |
|---|---|
| AOT426L | N-Channel Enhancement Mode Field Effect Transistor |
| AOT428 | N-Channel Enhancement Mode Field Effect Transistor |
| AOT428L | N-Channel Enhancement Mode Field Effect Transistor |
| AOT430 | N-Channel Enhancement Mode Field Effect Transistor |
| AOU400 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOT426L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOT428 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOT428L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOT42S60 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:600V 37A a MOS Power Transistor |
| AOT42S60L | 功能描述:MOSFET N-CH 600V 39A TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:aMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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