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參數(shù)資料
| 型號(hào)： | AOP806 |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | AOP806 |
AOP806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
6V
3.5V
4V
10V
4.5V
0
3
6
9
12
15
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
50
80
110
140
170
200
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
D
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
N
V
GS
=10V
I
D
=3.4A
V
GS
=4.5V
I
D
=2A
60
90
120
150
180
210
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=3.4A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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