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參數(shù)資料
| 型號(hào)： | AOP806 |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | AOP806 |
10 Sec
Steady State
75
V
DS
V
GS
3.4
2.7
2.7
2.1
I
DM
2.5
1.6
1.6
1
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
40
67
33
Max
50
80
40
t
≤
10s
Steady-State
Steady-State
R
θ
JL
A
mJ
°C
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
15
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics
Parameter
Units
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
±25
Drain-Source Voltage
Gate-Source Voltage
T
A
=70°C
Pulsed Drain Current
B
Power Dissipation
Avalanche Current
B
T
A
=25°C
Continuous Drain
Current
AF
Maximum
T
A
=25°C
T
A
=70°C
Parameter
Symbol
Units
W
A
P
D
-55 to 150
I
D
15
10
AOP806
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 75V
I
D
= 3.4A (V
GS
= 10V)
R
DS(ON)
< 132m
(V
GS
= 10V)
R
DS(ON)
< 168m
(V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AOP806 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for use as a load switch or
in PWM applications.
Standard Product AOP806 is Pb-free (meets
ROHS & Sony 259 specifications).
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
PDIP-8
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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