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參數(shù)資料
| 型號(hào)： | AOP604 |
| 廠商： | Optek Technology |
| 英文描述： | LJT 12C 8#20 4#16 SKT WALL REC |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 842K |
| 代理商： | AOP604 |
AOP604
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
1.8
30
22.6
28
T
J
=125°C
33
16
43
m
g
FS
12
S
V
I
S
DYNAMIC PARAMETERS
4
A
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
680
102
77
3
pF
pF
pF
Q
g
(10V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.45
0.007
0.5
0.05
V
3.2
12
37
10
20
C
T
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
pF
mA
Junction Capacitance
V
R
=15V
Turn-Off Fall Time
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
I
F
=7.5A, dI/dt=100A/
μ
s
V
R
=30V, T
J
=150°C
I
F
=1.0A
V
R
=30V
V
R
=30V, T
J
=125°C
I
rm
Maximum reverse leakage current
0.45
0.5
V
GS
=0V, V
DS
=15V, f=1MHz
I
F
=7.5A, dI/dt=100A/
μ
s
V
GS
=4.5V, V
DS
=15V, I
D
=7.5A
V
GS
=10V, V
DS
=15V, R
L
=2.0
,
R
GEN
=6
Schottky+ Body Diode Forward Voltage I
S
=1A
Maximum Body-Diode+Schottky Continuous Current
Reverse Transfer Capacitance
Gate resistance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance. (Schottky+FET)
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=7.5A
Forward Transconductance
V
DS
=5V, I
D
=7.5A
V
SD
m
V
GS
=4.5V, I
D
=6.0A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
n-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
Alpha Omega Semiconductor, Ltd.
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