參數(shù)資料
型號(hào): AOP604
廠商: Optek Technology
英文描述: LJT 12C 8#20 4#16 SKT WALL REC
中文描述: 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/11頁(yè)
文件大?。?/td> 842K
代理商: AOP604
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
-30
2.5
1.6
±20
7.5
6
30
2.5
1.6
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
A
T
A
=25°C
T
A
=70°C
I
D
W
-5.3
-6.6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Max n-channel
30
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Units
V
-55 to 150
-55 to 150
Parameter
Reverse Voltage
Continuous Forward
Current
A
Maximum Schottky
30
4
A
T
A
=70°C
2.7
20
2.5
Pulsed Forward Current
B
T
A
=25°C
I
D
W
T
A
=70°C
1.6
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
A
T
A
=25°C
P
D
AOP604
Complementary Enhancement Mode Field Effect Transistor
March 2003
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A -6.6A
R
DS(ON)
< 28m
< 35m
(V
GS
= 10V)
< 43m
< 58m
(V
GS
= 4.5V)
Schottky
V
DS
=30V, I
F
=3A, V
F
<0.5V@1A
General Description
The AOP604 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses.
D2
G2
S2
G1
D1
S1
K
A
G1
S2
S1/A
G2
D1/K
D2
D2
D1/K
1
2
3
4
8
7
6
5
N-ch
P-ch
PDIP-8
Alpha & Omega Semiconductor, Ltd.
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