- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36691 > AON7406 (ALPHA AND OMEGA SEMICONDUCTOR) 25 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AON7406 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 3 MM, GREEN, DFN-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 238K |
| 代理商： | AON7406 |
AON7406
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
10
A
VGS(th)
Gate Threshold Voltage
1.2
1.8
2.4
V
ID(ON)
50
A
14
17
TJ=125°C
20
24
18
23
m
gFS
40
S
VSD
0.75
1
V
IS
15
A
Ciss
600
740
888
pF
Coss
77
110
145
pF
Crss
50
82
115
pF
Rg
0.5
1.1
1.7
Qg(10V)
12
15
18
nC
Qg(4.5V)
6
7.5
9
nC
Qgs
2.5
nC
Qgd
3
nC
tD(on)
5
ns
tr
3.5
ns
tD(off)
19
ns
tf
3.5
ns
trr
6
8
10
ns
Qrr
14
18
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
RDS(ON)
Static Drain-Source On-Resistance
IDSS
Reverse Transfer Capacitance
m
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=9A
Drain-Source Breakdown Voltage
A
VDS=VGS ID=250A
VDS=0V, VGS= ±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IS=1A,VGS=0V
VDS=5V, ID=9A
VGS=4.5V, ID=8A
Forward Transconductance
Diode Forward Voltage
Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/s
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.67,
RGEN=3
Turn-Off Fall Time
IF=9A, dI/dt=500A/s
Body Diode Reverse Recovery Time
Turn-On Rise Time
VGS=10V, VDS=15V, ID=9A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Rev 5: Dec. 2010
www.aosmd.com
Page 2 of 6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP01N15GK-HF | 100 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP01N40G-HF | 400 V, 16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP02N40J-HF | 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP02N40H-HF | 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP02N90J-HF | 1.9 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AON7406_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AON7407 | 功能描述:MOSFET P CH 20V 40A DFN3X3EP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AON7408 | 功能描述:MOSFET N CH 30V 23A DFN3X3EP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AON7409 | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET P-CH 30V 32A 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET P-CH -30V -16A 8DFN |
| AON7410 | 功能描述:MOSFET N-CH 30V 9.5A DFN3X3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。