參數(shù)資料
型號(hào): AON7406
廠商: ALPHA AND OMEGA SEMICONDUCTOR
元件分類: JFETs
英文描述: 25 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 3 X 3 MM, GREEN, DFN-8
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 238K
代理商: AON7406
AON7406
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
25A
RDS(ON) (at VGS=10V)
< 17m
RDS(ON) (at VGS=4.5V)
< 23m
100% UIS Tested
100% Rg Tested
ESD protected
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
Maximum Junction-to-Ambient
A D
6.2
75
7.5
W
Power Dissipation
A
PDSM
W
TA=70°C
16.7
2
TA=25°C
15
TC=25°C
TC=100°C
Power Dissipation
B
PD
Continuous Drain
Current
18
9
A
TA=25°C
IDSM
A
TA=70°C
50
Pulsed Drain Current
C
Continuous Drain
Current
ID
25
The AON7406 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
7
A
19
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
30
60
40
Parameter
Typ
Max
TC=25°C
3.1
6.7
TC=100°C
Junction and Storage Temperature Range
-55 to 150
Top View
G
D
S
DFN 3x3A
Top View
Bottom View
Pin 1
G
S
D
Rev 5: Dec. 2010
www.aosmd.com
Page 1 of 6
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