參數(shù)資料
型號(hào): AOD420L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁數(shù): 1/4頁
文件大小: 161K
代理商: AOD420L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
1.9
Max
25
50
2.5
R
θ
JC
60
30
2.5
1.6
W
T
C
=100°C
T
A
=25°C
A
mJ
Repetitive avalanche energy L=0.1mH
C
36
W
Junction and Storage Temperature Range
A
P
DSM
°C
-55 to 175
T
A
=70°C
I
D
Continuous Drain
Current
G
Pulsed Drain Current
C
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
10
10
30
15
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
P
D
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
A
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AOD420
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 10A (V
GS
= 10V)
R
DS(ON)
< 28m
(V
GS
= 10V)
R
DS(ON)
< 42m
(V
GS
= 4.5V)
General Description
The AOD420 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product
AOD420 is Pb-free
(meets ROHS & Sony 259 specifications). AOD420L
is a Green Product ordering option. AOD420 and
AOD420L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AOD421 P-Channel Enhancement Mode Field Effect Transisto
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