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參數(shù)資料
| 型號(hào)： | AOD413YL |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 121K |
| 代理商： | AOD413YL |
AOD413Y
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-40
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-30
-1.9
36
56
51
16
45
70
69
T
J
=125°C
m
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
-0.75
-1
-12
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
657
143
63
6.5
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
14.1
7
2.2
4.1
8
12.2
24
12.5
23.2
18.2
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-12A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-10mA, V
GS
=0V
V
DS
=-32V, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-12A
Reverse Transfer Capacitance
Gate resistance
I
F
=-12A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-8A
V
DS
=-5V, I
D
=-12A
I
S
=-1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-20V, R
L
=1.7
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Input Capacitance
Output Capacitance
Turn-On DelayTime
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=-10V, V
DS
=-20V, I
D
=-12A
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0: Oct 2005
Alpha & Omega Semiconductor, Ltd.
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| AOD4144_002 | 功能描述:MOSFET N-CH TO252 制造商:alpha & omega semiconductor inc. 系列:SDMOS?? 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:13A（Ta），55A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:28nC @ 10V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:1430pF @ 15V FET 功能:- 功率耗散（最大值）:2.3W（Ta），50W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:8 毫歐 @ 20A，10V 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:TO-252，（D-Pak） 封裝/外殼:TO-252-3，DPak（2 引線 + 接片），SC-63 標(biāo)準(zhǔn)包裝:2,500 |
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