參數(shù)資料
型號(hào): AOD413YL
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 121K
代理商: AOD413YL
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
2.5
Max
25
50
3
R
θ
JL
°C
V
V
±20
-12
-12
-30
25
2.5
1.6
A
-12
30
50
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
-40
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Maximum
Units
Parameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
P
DSM
A
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
P
D
W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Steady-State
Steady-State
°C/W
°C/W
W
T
A
=70°C
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AOD413Y
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 45m
(V
GS
= -10V)
R
DS(ON)
< 69m
(V
GS
= -4.5V)
General Description
The AOD413Y uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard product
AOD413Y is Pb free, inside and out. It uses Pb-free
die attach and plating material(meets ROHS & Sony
259 specifications). AOD413YL is a Green Product
ordering option. AOD413Y and AOD413YL are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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AOD4144_002 功能描述:MOSFET N-CH TO252 制造商:alpha & omega semiconductor inc. 系列:SDMOS?? 包裝:帶卷(TR) 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET(金屬氧化物) 漏源電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):13A(Ta),55A(Tc) 驅(qū)動(dòng)電壓(最大 Rds On,最小 Rds On):4.5V,10V 不同 Id 時(shí)的 Vgs(th)(最大值):2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷?(Qg)(最大值):28nC @ 10V Vgs(最大值):±20V 不同 Vds 時(shí)的輸入電容(Ciss)(最大值):1430pF @ 15V FET 功能:- 功率耗散(最大值):2.3W(Ta),50W(Tc) 不同?Id,Vgs 時(shí)的?Rds On(最大值):8 毫歐 @ 20A,10V 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:表面貼裝 供應(yīng)商器件封裝:TO-252,(D-Pak) 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 標(biāo)準(zhǔn)包裝:2,500