- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375336 > AOB418 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AOB418 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | AOB418 |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
8.1
33
0.84
Max
12
40
1.5
R
θ
JL
A
Repetitive avalanche energy L=0.1mH
C
220
100
50
2.5
1.6
mJ
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±12
110
68
200
40
Pulsed Drain Current
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
Maximum
30
Units
T
A
=25°C
G
T
A
=100°C
B
W
A
P
D
°C
-55 to 175
I
D
W
AOB418
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 110A (V
GS
= 10V)
R
DS(ON)
< 6m
(V
GS
= 10V)
R
DS(ON)
< 7.2m
(V
GS
= 4.5V)
General Description
The AOB418 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOB418L | N-Channel Enhancement Mode Field Effect Transistor |
| AOB428 | N-Channel Enhancement Mode Field Effect Transistor |
| AOB428L | N-Channel Enhancement Mode Field Effect Transistor |
| AOB430Y | N-Channel Enhancement Mode Field Effect Transistor |
| AOB430YL | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOB4184 | 功能描述:MOSFET N-CH 40V 12A TO263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AOB4184L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOB418L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOB420 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOB420L | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。