參數(shù)資料
型號: AOB428
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大小: 129K
代理商: AOB428
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
9
40
1
Max
11
50
1.5
R
θ
JC
t
10s
Steady-State
R
θ
JA
°C/W
°C/W
Power Dissipation
A
T
A
=25°C
T
A
=70°C
P
DSM
2.5
1.6
W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
=25°C
Maximum
105
±25
40
Units
V
V
A
T
C
=100°C
28
100
40
80
100
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Continuous Drain
Current
I
D
A
mJ
W
T
C
=100°C
50
Junction and Storage Temperature Range
-55 to 175
°C
Power Dissipation
B
T
C
=25°C
P
D
Maximum Junction-to-Case
B
Steady-State
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
Maximum Junction-to-Ambient
A
AOB428
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 105V
I
D
= 40 A
R
DS(ON)
< 28 m
(V
GS
=10V) @ 20A
R
DS(ON)
< 31 m
(V
GS
= 6V)
General Description
The AOB428 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications.
Standard Product AOB428 is
Pb-free (meets ROHS & Sony 259 specifications).
AOB428L is a Green Product ordering option.
AOB428 and AOB428L are electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha Omega Semiconductor, Ltd.
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