參數(shù)資料
型號: AOB418L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大?。?/td> 113K
代理商: AOB418L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
8.1
33
0.84
Max
12
40
1.5
R
θ
JL
A
Repetitive avalanche energy L=0.1mH
C
220
100
50
2.5
1.6
mJ
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±12
110
68
200
40
Pulsed Drain Current
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
Maximum
30
Units
T
A
=25°C
G
T
A
=100°C
B
W
A
P
D
°C
-55 to 175
I
D
W
AOB418
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 110A (V
GS
= 10V)
R
DS(ON)
< 6m
(V
GS
= 10V)
R
DS(ON)
< 7.2m
(V
GS
= 4.5V)
General Description
The AOB418 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
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