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參數(shù)資料
| 型號(hào)： | AO8814 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | AO8814 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
64
89
53
Max
83
120
70
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
1.5
0.96
-55 to 150
T
A
=70°C
I
D
7.5
6
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±12
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
≤
10s
R
θ
JA
AO8814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7.5 A (V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 10V)
R
DS(ON)
< 18m
(V
GS
= 4.5V)
R
DS(ON)
< 24m
(V
GS
= 2.5V)
R
DS(ON)
< 34m
(V
GS
= 1.8V)
ESD Rating: 2500V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
General Description
The AO8814 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AO8814is Pb-
free (meets ROHS & Sony 259 specifications).
AO8814L is a Green Product ordering option.
AO8814 and AO8814L are electrically identical.
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO8814L | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8816 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8816L | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8818 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8818L | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO8814#A | 功能描述:MOSFET 2N-CH 20V 7.5A 8TSSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:16 毫歐 @ 7.5A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:15.4nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:1390pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標(biāo)準(zhǔn)包裝:1 |
| AO8814_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8814L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8816 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8816L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
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