參數資料
型號： AO8800
廠商： Alpha Industries, Inc.
英文描述： Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 常見的漏雙N溝道增強型場效應晶體管
文件頁數： 2/6頁
文件大?。?/td> 226K
代理商： AO8800
AO8800
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1
nA
V
A
0.6
30
0.8
20
28
23
32
51
17
0.66
24
36
30
40
70
T
J
=125°C
m
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
10
S
V
A
1
2.4
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
767
111
82
1.3
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
10
1.2
3.1
5
5.5
39
4.7
15
7.1
nC
nC
nC
ns
ns
ns
ns
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=2.5V, I
D
=5A
V
GS
=1.8V, I
D
=2.5A
V
DS
=5V, I
D
=5A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=6.4A
Reverse Transfer Capacitance
Gate resistance
Gate-Body leakage current
Gate Threshold Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Static Drain-Source On-Resistance
R
DS(ON)
I
DSS
μ
A
V
DS
=V
GS
I
D
=250
μ
A
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=2.4
,
R
GEN
=6
m
V
GS
=4.5V, I
D
=6A
I
S
=1A,V
GS
=0V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Turn-On DelayTime
I
F
=5A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=6.4A
V
GS
=0V, V
DS
=0V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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