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參數資料
| 型號： | AO8800 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強型場效應晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 226K |
| 代理商： | AO8800 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
64
89
53
Max
83
120
70
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
V
V
±12
6.4
5.4
30
1.5
1.08
Pulsed Drain Current
B
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
A
Maximum
30
Units
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
I
D
A
P
D
°C
-55 to 150
AO8800
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
July 2001
Features
V
DS
(V) = 30V
I
D
= 6.4A
R
DS(ON)
< 24m
(V
GS
= 10V)
R
DS(ON)
< 30m
(V
GS
= 4.5V)
R
DS(ON)
< 40m
(V
GS
= 2.5V)
R
DS(ON)
< 70m
GS
= 1.8V)
General Description
The AO8800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. This device is
suitable for use as a uni-directional or bi-directional
load switch, facilitated by its common-drain
configuration.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
TSSOP-8
Top View
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數 |
參數描述 |
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| AO8801 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO8801A | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET P-CH 20V 4.5A 8-Pin TSSOP T/R 制造商:Alpha & Omega Semiconductor 功能描述:MOSF P CH DL 20V 4.5A 8TSSOP |
| AO8801AL | 功能描述:MOSFET 2P-CH 20V 4.5A 8TSSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 P 溝道（雙） FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:4.5A 不同?Id，Vgs 時的?Rds On（最大值）:42 毫歐 @ 4.5A，4.5V 不同 Id 時的 Vgs（th）（最大值）:900mV @ 250μA 不同 Vgs 時的柵極電荷（Qg）:11nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:905pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應商器件封裝:8-TSSOP 標準包裝:1 |
| AO8801L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO8802 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
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