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參數(shù)資料
| 型號(hào)： | AO8403L |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 112K |
| 代理商： | AO8403L |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
64
89
53
Max
83
120
70
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
1.5
1
-55 to 150
T
A
=70°C
I
D
-4
-3.5
-30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
-20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±8
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
≤
10s
R
θ
JA
AO8403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -4 A (V
GS
= -4.5V)
R
DS(ON)
< 42m
(V
GS
= -4.5V)
R
DS(ON)
< 52m
(V
GS
= -2.5V)
R
DS(ON)
< 70m
(V
GS
= -1.8V)
ESD Rating: 3000V HBM
General Description
The AO8403 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
Standard Product AO8403 is Pb-free (meets
ROHS & Sony 259 specifications). AO8403L is a Green
Product ordering option. AO8403 and AO8403L are
electrically identical.
D
S
G
D
S
S
G
1
2
3
4
8
7
6
5
TSSOP-8
Top View
D
S
S
D
Alpha & Omega Semiconductor, Ltd.
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