- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375335 > AO7415L (Alpha Electronic Co., Ltd) P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO7415L |
| 廠商： | Alpha Electronic Co., Ltd |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 116K |
| 代理商： | AO7415L |
AO7415
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
-2.5
±1
±10
-1.4
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.7
-15
-0.9
V
A
80
115
98
130
5
-0.84
100
T
J
=125°C
125
170
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-0.95
0.6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
512
77
62
9.2
620
pF
pF
pF
13
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
4.9
3.5
3.7
11
8
34
12
13
4
6
nC
nC
nC
ns
ns
ns
ns
13
10
41
15
17
6
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=-2.5V, I
D
=-1.0A
V
DS
=-5V, I
D
=-2A
V
GS
=-10V, I
D
=-2A
Reverse Transfer Capacitance
Gate resistance
I
F
=-2A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
I
GSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Zero Gate Voltage Drain Current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-1.3A
I
S
=-1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-10V, R
L
=5
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
Input Capacitance
Output Capacitance
Turn-On DelayTime
On state drain current
V
GS
=-4.5V, V
DS
=-5V
Gate-Body leakage current
V
DS
=0V, V
GS
=±10V
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250
μ
A
Gate Threshold Voltage
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev2: August 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO7800 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO7800L | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8403 | P-Channel Enhancement Mode Field Effect Transistor |
| AO8403L | P-Channel Enhancement Mode Field Effect Transistor |
| AO8801 | Dual P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO7417 | 制造商:Alpha & Omega Semiconductor 功能描述:MOSF P CH 20V 1.9A SC70-6 |
| AO7417_13 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO7417L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO7600 | 功能描述:MOSFET N/P-CH COMPL 20V SC70-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO7600_001 | 功能描述:MOSFET N/P-CH SC70-6 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 和 P 溝道互補(bǔ)型 FET 功能:標(biāo)準(zhǔn) 漏源電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:900mA 不同?Id，Vgs 時(shí)的?Rds On（最大值）:300 毫歐 @ 900mA，4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:900mV @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:1.9nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:120pF @ 10V 功率 - 最大值:300mW 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商器件封裝:SC-70-6（SOT-363） 標(biāo)準(zhǔn)包裝:3,000 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。