參數(shù)資料
型號： AO6702L
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述： N溝道增強模式場效應晶體管肖特基二極管
文件頁數(shù)： 2/5頁
文件大?。?/td> 123K
代理商： AO6702L
AO6702
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1
nA
V
A
0.4
10
0.6
41.6
63
54
74
10.5
0.8
50
80
65
95
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
1.8
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
449
74
51.6
4.9
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
5.9
0.36
1.3
4.5
6
32.7
7.1
nC
nC
nC
ns
ns
ns
ns
13
3.3
ns
nC
0.39
0.5
0.02
V
20
C
T
t
rr
Q
rr
34
5.2
0.8
pF
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
I
F
=3.8A, dI/dt=100A/
μ
s
I
F
=3.8A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=3.8A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=2.5V, I
D
=3.3A
V
GS
=1.8V, I
D
=2.8A
V
DS
=5V, I
D
=3.8A
I
S
=1A,V
GS
=0V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=5V, V
DS
=10V, R
L
=2.6
,
R
GEN
=0
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Total Gate Charge
Gate Source Charge
I
F
=0.5A
V
R
=16V
V
R
=16V, T
J
=125°C
V
R
=10V
I
rm
Maximum reverse leakage current
mA
Junction Capacitance
V
GS
=4.5V, V
DS
=10V, I
D
=3.8A
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev3: August 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AO6704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6704L N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6706 N-Channel Enhancement Mode Field Effect Transistor
AO6706L N-Channel Enhancement Mode Field Effect Transistor
AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor
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