參數(shù)資料
型號： AO6700L
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述： N溝道增強模式場效應晶體管肖特基二極管
文件頁數(shù)： 2/4頁
文件大?。?/td> 115K
代理商： AO6700L
AO6700
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1
nA
V
A
0.4
10
0.6
41.6
63
54
74
10.5
0.8
50
80
65
95
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S
V
A
1
1.8
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
449
74
51.6
4.9
550
pF
pF
pF
6
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
5.9
0.36
1.3
4.5
6
32.7
7.1
7.2
nC
nC
nC
ns
ns
ns
ns
13
3.3
16
ns
nC
0.39
0.5
0.02
V
20
C
T
t
rr
Q
rr
34
5.2
0.8
pF
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
V
GS
=4.5V, V
DS
=10V, I
D
=4.1A
V
GS
=0V, V
DS
=10V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
mA
V
R
=16V, T
J
=125°C
V
R
=10V
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
Junction Capacitance
I
F
=0.5A
V
R
=16V
I
rm
Maximum reverse leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=4.1A
V
GS
=5V, V
DS
=10V, R
L
=2.35
,
R
GEN
=0
m
V
GS
=2.5V, I
D
=3.6A
V
GS
=1.8V, I
D
=3A
R
DS(ON)
Static Drain-Source On-Resistance
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=4.1A
V
DS
=16V, V
GS
=0V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±8V
I
F
=4.1A, dI/dt=100A/
μ
s
I
F
=4.1A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 2 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO6701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6701L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6702L N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AO6701L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6702 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6702L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO6704 功能描述:MOSFET N-CH 30V 3.6A 6-TSOP RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件
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