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參數(shù)資料
| 型號： | AO6409 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, TSOP-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 454K |
| 代理商： | AO6409 |
AO6409
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
VDS=-20V, VGS=0V
-1
TJ=55°C
-5
IGSS
±10
A
VGS(th)
Gate Threshold Voltage
-0.3
-0.57
-0.9
V
ID(ON)
-30
A
36
45
TJ=125°C
51
61
44
56
m
53
75
m
gFS
20
S
VSD
-0.64
-1
V
IS
-2
A
Ciss
620
780
940
pF
Coss
80
115
150
pF
Crss
50
80
110
pF
Qg
7.4
9.3
11
nC
Qgs
1.2
1.5
1.8
nC
Qgd
1
1.8
2.5
nC
tD(on)
120
ns
tr
240
ns
t
2.8
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=2,
R
=3
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-5A
Gate Source Charge
Gate Drain Charge
RDS(ON)
m
IS=-1A,VGS=0V
VDS=-5V, ID=-5A
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
VDS=VGS ID=-250A
VDS=0V, VGS= ±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
Static Drain-Source On-Resistance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-5A
Reverse Transfer Capacitance
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
tD(off)
2.8
s
tf
2
s
trr
11
14
17
ns
Qrr
24
30
36
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=500A/s
Turn-Off DelayTime
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=500A/s
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 4: July 2010
www.aosmd.com
Page 2 of 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO6409_102 | 功能描述:MOSFET P-CH 20V 5.5A 6TSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:邏輯電平柵極，1.8V 驅(qū)動 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:5.5A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:45 毫歐 @ 5A，4.5V 不同 Id 時的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:17.2nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:1450pF @ 10V 功率 - 最大值:2.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SC-74，SOT-457 供應(yīng)商器件封裝:6-TSOP 標(biāo)準(zhǔn)包裝:1 |
| AO6409_DELTA | 功能描述:MOSFET P-CH 20V 6TSOT 制造商:alpha & omega semiconductor inc. 系列:- 零件狀態(tài):最後搶購 標(biāo)準(zhǔn)包裝:3,000 |
| AO6409A | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET P-CH 20V 5.5A 6-Pin TSOP 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET P-CH 20V 5.5A TSOP6 |
| AO6409A_102 | 功能描述:MOSFET P-CH 20V 6TSOT 制造商:alpha & omega semiconductor inc. 系列:- 零件狀態(tài):最後搶購 標(biāo)準(zhǔn)包裝:3,000 |
| AO6409AL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode |
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