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參數(shù)資料
| 型號(hào)： | AO6405 |
| 廠商： | Alpha Industries, Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 284K |
| 代理商： | AO6405 |
AO6405
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-
1
0
-1.8
39
54
67
8.6
-0.77
52
70
87
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
6
S
V
A
-1
-2.8
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
700
120
75
10
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
14.7
7.6
2
3.8
8.3
5
29
14
23.5
13.4
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=5.0A
Reverse Transfer Capacitance
Gate resistance
I
F
=-5A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, I
D
=-5A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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| AO6405_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
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| AO6408 | 功能描述:MOSFET N-CH 20V 8.8A 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO6408_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
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