- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375334 > AO4F800 (ALPHA) Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO4F800 |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | AO4F800 |
AO4F800
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
2.5
nA
V
A
1
1.8
80
5.4
7.56
6.8
82
0.7
6.5
9.1
8.5
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
4.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
6060
638
355
0.45
7270
pF
pF
pF
0.54
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
103
48
18
15
12
8
51.5
8.8
33.5
22
124
57
nC
nC
nC
nC
ns
ns
ns
ns
14
10
62
11
40
26
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=17.7A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=17.7A
Reverse Transfer Capacitance
Gate resistance
I
F
=17.7A, dI/dt=100A/
μ
s
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
m
V
GS
=4.5V, I
D
=13A
V
DS
=5V, I
D
=17.7A
I
S
=1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.85
,
R
GEN
=3
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
Total Gate Charge
Gate Source Charge
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=15V, I
D
=17.7A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev2: August 2005
≤
10s thermal resistance rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOF800L | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO6401 | P-Channel Enhancement Mode Field Effect Transistor |
| AO6401L | P-Channel Enhancement Mode Field Effect Transistor |
| AO6403 | P-Channel Enhancement Mode Field Effect Transistor |
| AO6403L | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO-51 | 制造商:Thomas & Betts 功能描述:PHENOLIC COVER W/GASKETS |
| AO5401E | 功能描述:MOSFET P-CH 20V 0.5A SC89-3L RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO5401EL | 制造商:AOS 功能描述:MOSFET |
| AO5404E | 功能描述:MOSFET N-CH 20V 0.5A SC89-3L RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO5404E_001 | 功能描述:MOSFET N-CH SC89-3 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類(lèi)型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:500mA（Ta） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:1.8V，4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:1nC @ 4.5V Vgs（最大值）:±8V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:45pF @ 10V FET 功能:- 功率耗散（最大值）:280mW（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:550 毫歐 @ 500mA，4.5V 工作溫度:-55°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 供應(yīng)商器件封裝:SC-89-3 封裝/外殼:SC-89，SOT-490 標(biāo)準(zhǔn)包裝:3,000 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。