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參數(shù)資料
| 型號： | AO4F800 |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對稱雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 146K |
| 代理商： | AO4F800 |
AO4F800
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
30
1.8
15
21
22
23
0.76
18
25
27
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
18
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
1040
190
120
0.7
1250
pF
pF
pF
0.85
Q
g
(10V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
19.8
9.8
2.5
3.5
5.2
5
20.5
3.6
15
8
24
12
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
6.25
6
25
4.3
18
10
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge I
F
=8.3A, dI/dt=100A/
μ
s
I
F
=8.3A, dI/dt=100A/
μ
s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.3A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=4.5V, I
D
=6.7A
V
DS
=5V, I
D
=8.3A
I
S
=1A
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=15V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=15V, I
D
=8.3A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev2: August 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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