參數(shù)資料
型號(hào)： AO4944
廠商： ALPHA
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 123K
代理商： AO4944
AO4944
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=30V, V
GS
=0V
0.01
5
0.1
10
0.1
2.4
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
Gate Threshold Voltage
On state drain current
1.5
40
1.8
V
A
13
20
16
64
0.4
16
25
20
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
0.6
4.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1450
224
92
1.6
1885
pF
pF
pF
3.0
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
24
12.0
3.9
4.2
5.5
4.7
24.0
4.0
10
6.8
31
nC
nC
nC
ns
ns
ns
ns
12
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F
=8.6A, dI/dt=300A/
μ
s
Drain-Source Breakdown Voltage
I
D
=250uA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.6A
Reverse Transfer Capacitance
Gate resistance
I
F
=8.6A, dI/dt=300A/
μ
s
V
DS
=V
GS
I
D
=250
μ
A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±12V
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
m
V
GS
=4.5V, I
D
=7A
V
DS
=5V, I
D
=8.6A
I
S
=1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.7
,
R
GEN
=3
Turn-On DelayTime
Total Gate Charge
Total Gate Charge
Gate Source Charge
V
GS
=10V, V
DS
=15V, I
D
=8.6A
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
A:The value of R
θ
JA
is measured with the device mounted on 1 in 2 FR-4 board with 2
OZ
. Copper, in a still air environment with T
A
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D: The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E: These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
F: The current rating is based on the t<=10s junction to ambient thermal resistance rating.
Rev0:December 2006
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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參數(shù)描述
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