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參數(shù)資料
| 型號： | AO4906 |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 127K |
| 代理商： | AO4906 |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
71
32
47.5
R
θ
JA
62.5
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Steady-State
110
40
110
40
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Steady-State
35
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t
≤
10s
Parameter
Drain-Source Voltage
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
3
2
40
2
1.44
A
Continuous Drain Current
A
Pulsed Drain Current
B
Schottky reverse voltage
Gate-Source Voltage
Schottky
I
F
62.5
48
74
Max
°C/W
°C/W
MOSFET
30
±12
7
6
40
2
Junction and Storage Temperature Range
W
30
1.44
Power Dissipation
AO4906
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 7A (V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 10V)
R
DS(ON)
< 32m
(V
GS
= 4.5V)
R
DS(ON)
< 50m
(V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4906 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further.
Standard Product AO4906 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4906L is a Green Product ordering option.
AO4906 and AO4906L are electrically identical.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4906L | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4912 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4912L | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914A | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4914AL | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4906L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4912 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4912L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標準包裝:1 |
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