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參數(shù)資料
| 型號： | AO4904L |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 152K |
| 代理商： | AO4904L |
AO4904
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1.4
nA
V
A
0.7
25
1
22.6
33
27
42
27
40
32
50
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
12
16
0.71
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
846
96
67
1.24
1050
pF
pF
pF
3.6
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
9.6
1.65
3
5.7
13
37
4.2
15.5
7.9
12
nC
nC
nC
ns
ns
ns
ns
ns
nC
8.55
6.2
40
5.5
20
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
I
F
=5A, dI/dt=100A/
μ
s
I
F
=5A, dI/dt=100A/
μ
s
0.45
0.007
0.5
0.05
V
3.2
12
37
10
20
C
T
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Junction Capacitance
V
R
=15V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
I
F
=1.0A
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
I
rm
Maximum reverse leakage current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
mA
V
GS
=4.5V, V
DS
=15V, I
D
=6.9A
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
DS
=5V, I
D
=5A
I
S
=1A
V
GS
=0V, V
DS
=15V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6.9A
m
V
GS
=4.5V, I
D
=6.0A
V
GS
=2.5V, I
D
=5A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
= ±12V
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 3 :
August
2005
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AO4906 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4906L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4912 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4912L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914 | 制造商:Alpha & Omega Semiconductor 功能描述: |
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