參數(shù)資料
型號: AO4817L
廠商: ALPHA
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙P溝道增強型場效應晶體管
文件頁數(shù): 4/4頁
文件大?。?/td> 110K
代理商: AO4817L
AO4817
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PROD1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTION0.1
0
2
4
6
8
10
0
5
10
15
20
25
30
35
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
G
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
10
20
30
40
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
1ms
10ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=-15V
I
D
=-8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4818 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4818L Dual N-Channel Enhancement Mode Field Effect Transistor
AO4821 Dual P-Channel Enhancement Mode Field Effect Transistor
AO4821L Dual P-Channel Enhancement Mode Field Effect Transistor
AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4818 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
AO4818_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-channel MOSFET
AO4818B 功能描述:MOSFET DUAL N-CH 30V 8.5A 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道(雙) FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO4818BL_101 功能描述:MOSFET 2N-CH 30V 8A 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷(TR) 零件狀態(tài):過期 FET 類型:2 個 N 溝道(雙) FET 功能:邏輯電平門 漏源極電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時):8A 不同?Id,Vgs 時的?Rds On(最大值):19 毫歐 @ 8A,10V 不同 Id 時的 Vgs(th)(最大值):2.4V @ 250μA 不同 Vgs 時的柵極電荷(Qg):18nC @ 10V 不同 Vds 時的輸入電容(Ciss):888pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商器件封裝:8-SO 標準包裝:1
AO4818L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor