參數(shù)資料
型號(hào): AO4821
廠商: ALPHA
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙P溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 114K
代理商: AO4821
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
48
74
35
Max
62.5
110
40
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
2
1.28
-55 to 150
T
A
=70°C
I
D
-8
-6.7
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
-12
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±8
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
10s
R
θ
JA
AO4821
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -12V
I
D
= -8 A (V
GS
= -4.5V)
R
DS(ON)
< 18m
(V
GS
= -4.5V)
R
DS(ON)
< 22m
(V
GS
= -2.5V)
R
DS(ON)
< 29m
(V
GS
= -1.8V)
ESD Rating: 4KV HBM
General Description
The AO4821 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Standard Product
AO4821 is Pb-free (meets ROHS & Sony 259
specifications). AO4821L is a Green Product ordering
option. AO4821 and AO4821L are electrically
D1
S1
G1
D2
S2
G2
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4821L Dual P-Channel Enhancement Mode Field Effect Transistor
AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor
AO4822AL Dual N-Channel Enhancement Mode Field Effect Transistor
AO4822 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4822L Dual N-Channel Enhancement Mode Field Effect Transistor
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