參數(shù)資料
型號(hào)： AO4712
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁數(shù)： 2/5頁
文件大?。?/td> 153K
代理商： AO4712
AO4712
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=30V, V
GS
=0V
0.1
10
0.1
2.4
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
Gate Threshold Voltage
On state drain current
1.5
60
1.8
V
A
12
19
15
64
0.38
14.5
24
18
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
0.5
4.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1450
224
92
130 p
F
1.6
3.0
1885
pF
pF
0.8
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
24.0
12.0
16 n
C
3.9
4.2
5.5
4.7
24.0
4.0
10
12
6.8
31
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
18
Total Gate Charge
9
Gate Source Charge
V
GS
=10V, V
DS
=15V, I
D
=11.2A
Gate Drain Charge
Turn-On DelayTime
V
GS
=0V, V
DS
=15V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.2
,
R
GEN
=3
m
V
GS
=4.5V, I
D
=10A
V
DS
=5V, I
D
=11.2A
I
S
=1A,V
GS
=0V
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=11.2A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±12V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=11.2A, dI/dt=300A/
μ
s
I
D
=1mA, V
GS
=0V
I
F
=11.2A, dI/dt=300A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
provides a single pulse rating.
F. The current rating is based on the t
≤
10s junction to ambient thermal resistance rating.
Rev2: Dec 2006
A
=25°C. The SOA curve
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料
PDF描述
AO4714 N-Channel Enhancement Mode Field Effect Transistor
AO4720 N-Channel Enhancement Mode Field Effect Transistor
AO4800A Dual N-Channel Enhancement Mode Field Effect Transistor
AO4800AL Dual N-Channel Enhancement Mode Field Effect Transistor
AO4800B Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4712_12 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET
AO4714 功能描述:MOSFET N-CH 30V 20A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SRFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
AO4714_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET
AO4716 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AO4718 功能描述:MOSFET N CH 30V 15V SOIC 8 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SRFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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