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參數(shù)資料
| 型號(hào)： | AO4607 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 203K |
| 代理商： | AO4607 |
AO460
7
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
12
10
20
100
3
I
GSS
V
GS(th)
I
D(ON)
nA
V
A
1
20
1.9
22.5
31.3
34.5
15.4
0.45
28
38
42
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance (FET+Schottky)
10
S
V
A
0.5
5.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
680
131
77
3
820
pF
pF
pF
3.6
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
13.7
4.1
16.6
nC
nC
nC
nC
ns
ns
ns
ns
16.5
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode+Schottky Continuous Current
Body-Diode+Schottky Reverse Recovery Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
I
F
=6.9A, dI/dt=100A/
μ
s
Turn-Off DelayTime
Turn-Off Fall Time
Body-Diode+Schottky Reverse Recovery Time
I
F
=6.9A, dI/dt=100A/
μ
s
N-Channel + Schottky Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
I
DSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
mA
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=6.9A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Body-Diode+Schottky Forward Voltage
m
V
GS
=4.5V, I
D
=5.0A
V
DS
=5V, I
D
=6.9A
I
S
=1A
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=6.9A
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Gate resistance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev 4: Sept 2005
Alpha Omega Semiconductor, Ltd.
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