參數(shù)資料
型號(hào): AO4468
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 144K
代理商: AO4468
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
31
59
16
Max
40
75
24
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±20
11.6
9.2
50
3.1
2
Pulsed Drain Current
B
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
Continuous Drain
Current
A
Drain-Source Voltage
Maximum
30
Units
T
A
=25°C
T
A
=70°C
W
A
P
D
°C
-55 to 150
I
D
AO4468
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 11.6A (V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 10V)
R
DS(ON)
< 22m
(V
GS
= 4.5V)
General Description
The AO4468 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. The source leads are separated
to allow a Kelvin connection to the source, which
may be used to bypass the source inductance.
Standard Product AO4468 is Pb-free (meets ROHS
& Sony 259 specifications). AO4468L is a Green
Product ordering option. AO4468 and AO4468L are
electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
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