參數(shù)資料
型號： AO4447L
廠商： ALPHA
元件分類： MOSFETs
英文描述： P-Channel Enhancement Mode Field Effect Transistor
中文描述： 的P -溝道增強型場效應晶體管
文件頁數(shù)： 2/7頁
文件大?。?/td> 595K
代理商： AO4447L
AO4447
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-10
±10
-1.6
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
-1
-60
-1.3
V
A
6.7
9.4
9.2
60
-0.69
8
T
J
=125°C
12
12
m
Ω
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
5.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
5500
745
473
3.1
6600
pF
pF
pF
Ω
4
Q
g
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 1. June 2006
88.8
45.2
10.1
19.4
12
11.5
100
40
46.6
67.7
120
60
nC
nC
nC
nC
ns
ns
ns
ns
60
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Gate Charge
Gate Source Charge
V
GS
=-10V, V
DS
=-15V, R
L
=1.7
Ω
,
R
GEN
=3
Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-
15A
m
Ω
V
GS
=-4V, I
D
=-13A
V
DS
=-5V, I
D
=-15A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-15A
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-15A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-15A, dI/dt=100A/
μ
s
≤
10s thermal resistance rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AO4449 P-Channel Enhancement Mode Field Effect Transistor
AO4450 N-Channel Enhancement Mode Field Effect Transistor
AO4450L N-Channel Enhancement Mode Field Effect Transistor
AO4451 P-Channel Enhancement Mode Field Effect Transistor
AO4456 N-Channel Enhancement Mode Field Effect Transistor
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