參數(shù)資料
型號(hào): AO4450L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 115K
代理商: AO4450L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
38
69
24
Max
50
80
30
R
θ
JL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Maximum
40
Units
V
V
Gate-Source Voltage
Continuous Drain
Current
A
±20
6.6
5.2
20
I
D
T
A
=25°C
T
A
=70°C
P
D
2.5
1.6
A
T
A
=70°C
Pulsed Drain Current
B
T
A
=25°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
°C/W
°C/W
W
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AO4450
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 40V
I
D
= 6.6A (V
GS
= 10V)
R
DS(ON)
<30m
(V
GS
= 10V)
R
DS(ON)
< 43m
(V
GS
= 4.5V)
General Description
The AO4450 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4450 is Pb-free
(meets ROHS & Sony 259 specifications). AO4450L
is a Green Product ordering option. AO4450 and
AO4450L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
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