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參數(shù)資料
| 型號： | AO3703L |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強(qiáng)模式場的肖特基二極管晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 115K |
| 代理商： | AO3703L |
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
G
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
C
oss
C
rss
0
0.001
5
10
15
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
μ
s
T
J(Max)
=150°C
T
A
=25°C
V
DS
=-10V
I
D
=-2.7A
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
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