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參數(shù)資料
| 型號： | AO3703L |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強模式場的肖特基二極管晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AO3703L |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
58.5
80
110
150
°C/W
Maximum Junction-to-Ambient
A
Steady-State
117
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
80.3
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
0.72
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.14
0.92
A
1
Pulsed Forward Current
B
10
Schottky reverse voltage
20
2
Continuous Forward Current
A
I
F
A
-2.1
-10
Pulsed Drain Current
B
Gate-Source Voltage
±8
-2.7
Continuous Drain Current
A
I
D
Parameter
Drain-Source Voltage
MOSFET
-20
Schottky
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO3703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -2.7 A (V
GS
= -10V)
R
DS(ON)
< 97m
(V
GS
= -4.5V)
R
DS(ON)
< 130m
(V
GS
= -2.5V)
R
DS(ON)
< 190m
(V
GS
= -1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO3703 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3703 is Pb-free (meets ROHS & Sony
259 specifications). AO3703L is a Green Product ordering
option. AO3703 and AO3703L are electrically identical.
SOT-23-5
Top View
1
2
3
5
4
G
S
A
D
K
A
K
D
S
G
Alpha & Omega Semiconductor, Ltd.
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