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| 型號(hào)： | AN4870 |
| 英文描述： | The effect of temperature on thyristor performance |
| 中文描述： | 對(duì)晶閘管高溫性能的影響 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 76K |
| 代理商： | AN4870 |
3/5
AN4870 Application Note
www.dynexsemi.com
Rapid temperature changes associated with highdi/dt can cause
micro cracking. It has been shown that, in silicon, micro cracking
occurs with
T between 300 and 350
C. Somos et al have shown
how the value of
T relates the expected life time of the device
measured in numbers of operations and device diameter. (Fig.3).
Although continuous operation at 250 to 300
C will destroy PN
junction characteristics it is possible to operate transiently in this
region if allowance is made for reduced device life. Such is the
philosophy behind surge current protection when roughly 100
operations up to I
values are allowed in the life time of a device.
When any overload current wave shape is more complex than a
simple sine wave a method of calculating end-of-pulse
temperature has to be used. Calculation of steady state T
takes
account of the device case temperature, average current/power
loss and steady state thermal resistance. However, for short
term overloads it is necessary to include variation of device
thermal resistance with time and the device on-state volt drop
with temperature. A method of calculating junction temperature
using a computer program is described for overloads lasting 1 to
about 100ms:
The information on the overload current is inputted as a
series of instantaneous current values with corresponding
time points.
The device transient thermal impedance curve is represented
as a polynomial with 5 components, fig.4
5
Z( t ) =
Σ
A(i).exp[ -t / B ( i ) ]
i=1
where B = 0.001,0.01,0.1,1.0 and 2 seconds.
Associated with each component is a constant and each device
type has its own unique set of 5 constants.
The variation of on-state voltage with forward current is also
represented by a polynomial with 5 components.
V( I, T
j
) = V
φ
( 1 + BT x T
j
) + R
φ
+ I (1 + AL x T
j
)
+ E
φ
( 273 + T
j
) Log
10
(i) + 2.3025
The curve is determined experimentally using a 10ms half sine
pulse which goes to currents which are almost 90% of I
. The
resultant heating effect is noticeable by the V
increase on the
falling edge of the current pulse. An example of such a
“
surge
loop
”
is shown in fig.5.
Notice that the surge loop equation includes a temperature term
which the normal data sheet V
curve does not. In other words,
the
“
surge loop
”
model calculates change in V
TM
due to junction
temperature increase.
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side
cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Fig.4 Maximim (limit) transient thermal impedance
- junction to case
C
Voltage - (V)
Fig.5 Surge loop
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