- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄364679 > AN4870 The effect of temperature on thyristor performance PDF資料下載
參數(shù)資料
| 型號(hào)： | AN4870 |
| 英文描述： | The effect of temperature on thyristor performance |
| 中文描述： | 對(duì)晶閘管高溫性能的影響 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | AN4870 |
1/5
AN4870 Application Note
www.dynexsemi.com
80
100
120
140
160
180
200
Thyristor junction temperature - (C)
0
20
40
60
80
100
P
V
DRM
V
RRM
Fig.1 Thyristor de-rating curves
The junction temperature ( T
) of a power semiconductor in any
particular situation profoundly affects its performance and
reliability. During its working life a thyristor can experience a wide
range of temperatures.
Operating at –40C is not damaging but allowance must be made
by the user for increased gate trigger current, latching current
and holding current as well as slow turn-on (see application note
AN4840 Gate Triggering and Gate Characteristics). Working in
the range between room temperature and 125C gives the best
compromise between ease of operation and operational life.
T
= 125C is chosen as the design maximum value since above
this, blocking current starts to increase rapidly, thus degrading
voltage rating, see fig.1.
The device becomes much more susceptible to over-voltage
transients , high dv/dt, di/dt and surge current. In the case of the
forward blocking junction there is an increasing chance of
forward breakover triggering. For special applications it is
possible to select devices to operate continuously with low
leakage at T
= 140C but such devices may need to be fully
characterised and rated on other parameters at 140C.
Many applications involve infrequent current overloads for short
periods and it is possible to allow T
to rise well above 125C in
such situations. A typical situation is during a load short circuit
when the device is protected by a fuse. In 50Hz circuits the
thyristor may often have to carry short circuit current for up to
10ms. During this time T
can rise transiently to 300 - 500C
without the junction being damaged. Peak temperature lags
peak current by typically 2 or 3 milliseconds and, although falling,
is still high at the end of the current pulse. If current is interrupted
by a fuse, little or no reverse voltage appears across the device.
However, the re-application of reverse voltage at such a high
temperature can result in very high reverse recovery power
dissipation. This escalates the junction temperture further and
the subsequent high blocking current leads to reverse voltage
failure by thermal runaway.
Limit case surge currents are determined by experimental means
using a 50Hz half sine of current and published in the data sheet.
These I
limit values are used to determine the peak temperature
( Using I
for V
=0 ) and the temperature at the end of the
current loop ( Using I
for V
= 50% V
). These temperatures
are then taken as the limit temperatures for the particular device.
If temperatures in other applications are kept below these, then
the condition will be safe.
The method of calculating overload T
for the published I
TSM
currents and other overload conditions is discussed below.
The overload above assumed a high speed fuse or circuit
breaker will interrupt the supply before forward blocking voltage
appears. Some overloads require that the device survives with
AN4870
Effects Of Temperature On Thyristor Performance
Application Note
AN4870-3.1 July 2002
Replaces September 2000 version, AN4870-3.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AN4999 | Turn-on of thyristors in parallel |
| AN5001 | Use of the VTO. rT on-state characteristic model |
| AN5111 | TV Sound and Video Receiver Circuit |
| AN5112 | Analog IC |
| AN5120N | TV Video Receiver Circuit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AN48800A | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation |
| AN48800A-NL | 功能描述:IC HALL SENSOR UNIDIRECT MINI-3 RoHS:是 類(lèi)別:傳感器，轉(zhuǎn)換器 >> 磁性 - 霍爾效應(yīng)，數(shù)字式開(kāi)關(guān)，線(xiàn)性，羅盤(pán) (IC) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 傳感范圍:20mT ~ 80mT 類(lèi)型:旋轉(zhuǎn) 電源電壓:4.5 V ~ 5.5 V 電流 - 電源:15mA 電流 - 輸出（最大）:- 輸出類(lèi)型:數(shù)字式，PWM，8.5 位串行 特點(diǎn):可編程 工作溫度:-40°C ~ 150°C 封裝/外殼:20-SSOP（0.209"，5.30mm 寬） 供應(yīng)商設(shè)備封裝:20-SSOP 包裝:Digi-Reel® 其它名稱(chēng):AS5132-HSST-500DKR |
| AN48810B | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation |
| AN48810B-NL | 功能描述:IC HALL SENSOR UNIDIRECT SMINI-5 RoHS:是 類(lèi)別:傳感器，轉(zhuǎn)換器 >> 磁性 - 霍爾效應(yīng)，數(shù)字式開(kāi)關(guān)，線(xiàn)性，羅盤(pán) (IC) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 傳感范圍:20mT ~ 80mT 類(lèi)型:旋轉(zhuǎn) 電源電壓:4.5 V ~ 5.5 V 電流 - 電源:15mA 電流 - 輸出（最大）:- 輸出類(lèi)型:數(shù)字式，PWM，8.5 位串行 特點(diǎn):可編程 工作溫度:-40°C ~ 150°C 封裝/外殼:20-SSOP（0.209"，5.30mm 寬） 供應(yīng)商設(shè)備封裝:20-SSOP 包裝:Digi-Reel® 其它名稱(chēng):AS5132-HSST-500DKR |
| AN48820A-NL | 功能描述:IC HALL SENSOR UNIDIRECT MINI-3 RoHS:是 類(lèi)別:傳感器，轉(zhuǎn)換器 >> 磁性 - 霍爾效應(yīng)，數(shù)字式開(kāi)關(guān)，線(xiàn)性，羅盤(pán) (IC) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 傳感范圍:20mT ~ 80mT 類(lèi)型:旋轉(zhuǎn) 電源電壓:4.5 V ~ 5.5 V 電流 - 電源:15mA 電流 - 輸出（最大）:- 輸出類(lèi)型:數(shù)字式，PWM，8.5 位串行 特點(diǎn):可編程 工作溫度:-40°C ~ 150°C 封裝/外殼:20-SSOP（0.209"，5.30mm 寬） 供應(yīng)商設(shè)備封裝:20-SSOP 包裝:Digi-Reel® 其它名稱(chēng):AS5132-HSST-500DKR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。