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| 型號(hào)： | AN4870 |
| 英文描述： | The effect of temperature on thyristor performance |
| 中文描述： | 對(duì)晶閘管高溫性能的影響 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | AN4870 |
2/5
www.dynexsemi.com
AN4870 Application Note
100%
75%
50%
25%
1
0.1
0.01
0.001
F
40
50
60
70
80
90
100
Junction temperature - (
C)
Fig.2 Thyristor failure rate vs applied voltage as a percentage of V
(rated) and junction temperature due
to ion migration in junction passivation
Fig.3 Thermal fatigue life expectancy
1.00E + 03
1.00E + 04
1.00E + 05
1.00E + 06
1.00E + 07
1.00E + 08
No. of cycles
250
200
150
100
50
0
T
C
30mm
38mm
50mm
75mm
100mm
both reverse and then forward voltage being reapplied. For
forward blocking two possible failure modes apply:-
1) Failure to turn-off because of the high turn-off time,t
q
value at
elevated temperature.
2) Breakover due to high blocking current alone.
The most likely is 1). Variation of t
with temperature for a range
of other conditions must be determined experimentally.
Other important temperatures are:
Temperatures below T
where ion migration on the silicon
surface under the passivation can lead to long term
degradation. (See fig.2)
Continuous T
permitted before thermal runaway occurs.
This is likely to be important only with high leakage
thyristors and when very small heatsinks are used.
Circa 250
C continuous: Rubber locaters and organic
passivation material starts to disintegrate; some annealing-
out of electron irradiation.
Above 600
C. The metal of the surface contacts starts to
penetrate into the silicon causing eventual short circuit. This
is probably a factor in di/dt failure.
1100 to 1300
C. This is the temperature reached at non-
repetitive di/dt limits. The high local thermal stress causes
cracking of the silicon.
1415
C - Melting point of silicon.
Another important temperature limit is the magnitude of
temperature excursions (
T
j )
which relates strongly to the
operating life of the device. Slow temperature changes stress the
various mechanical parts of the device and cause the movement
of one component relative to another due to differential expansion
and contraction.
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