參數(shù)資料
型號(hào)： AN103
廠商： Electronic Theatre Controls, Inc.
英文描述： The FET Constant-Current Source/Limiter
中文描述： 場(chǎng)效應(yīng)管的恒流源/限制器
文件頁(yè)數(shù)： 5/5頁(yè)
文件大?。?/td> 56K
代理商： AN103
AN103
Siliconix
10-Mar-97
5
Choosing the Correct JFET for Source
Biasing
Each of the Siliconix device data sheets include typical
transfer curves that can be used as illustrated in Figure 7.
Several popular devices are ideal for source biased cur-
rent sources covering a few As to 20 mA. To aid the de-
signer, the devices in Table 1 have been plotted to show
the drain current, I
D
, versus the source resistance, R
S
, in
Figures 8, 9, and 10. Most plots include the likely worst
case I
D
variations for a particular R
S
. For tighter current
control, the JFET production lot can be divided into
ranges with an appropriate resistor selection for each
range.
Table 1:
Source Biasing Device Recommendations
Practical
Current
Range I
D
(mA)
Through-Hole
Plastic Device
Surface
Mount
Device
Metal Can
Device
0.01 – 0.02
PN4117A
SST4117
2N4117A
0.01 – 0.04
PN4118A
SST4118
2N4118A
0.02 – 0.1
PN4119A
SST4119
2N4119A
0.01 – 0.1
J201
SST201
2N4338
0.02 – 0.3
J202
SST202
2N4339
0.1 – 2
J113
SST113
2N4393
0.2 – 10
J112
SST112
2N4392
–55 C
20
0.1
10
0.1
R
S
– Source Resistance (k )
–
I
D
A
1
1
Figure 10.
JFET Source Biased Drain-Current vs. Source Resistance
10
R
S
V
DD
= 5 to 30 V
T
J
= 25 C except as noted
125 C
2N4393,
SST/J113 Max
Mid
2N4392,
SST/J112
Min 2N4392,
SST/J112
Min 2N4393
SST/J113
Mid
V
DD
5
0.5
T
J
= 25 C
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