參數資料
型號: AMMC-6333-W50
元件分類: 放大器
英文描述: 18000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 0.100 X 0.051 INCH, DIE-9
文件頁數: 4/11頁
文件大?。?/td> 451K
代理商: AMMC-6333-W50
2
Absolute Maximum Ratings
Symbols
Parameters
Unist
Maximum
Notes
Vd-Vg
Drain to Gate Voltage
V
14
Vd
Positive Supply Voltage
V
5.5
Vg
Gate Supply Voltage
V
0 to 5
Id
Drain Current
mA
TBD
2
PD
Power Dissipation
W
2.5
2 and 3
Pin
CW Input Power
dBm
20
2
Tch
Operating Channel Temp
qC
+150
4
Tstg
Storage Case Temp.
qC
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
qC
+320
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these limitations
will signicantly reduce the lifetime of the device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85
qC, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly aect the device MTTF. For maximum life, it is
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
DC Specications/ Physical Properties
Symbols
Parameters and Test Conditions
Units
Values
Id
Drain Supply Current
(Vd=5 V, Vg set for typical IdQ – quiescent current)
mA
230
Vg
Gate Supply Operating Voltage
(IdQ = 230 mA)
V2
Ig
Gate Supply Current
mA
7
RTjc
Thermal Resistance
(Channel-to-Backside)
°C/W
26
Tch
Channel Temperature
°C
115
Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 85°C
PD = 2.5W
Tchannel = 150°C
Thermal Resistance (
Tjc)
Vd = 5V
Id = 230mA
PD = 1.15W
Tbaseplate = 85°C
Tjc = 26°C/W
Tchannel = 115°C
Thermal Resistance (
Tjc)
Under RF Drive
Vd = 5V
Id = 430mA
Pout = 24dBm
Pd = 1.89W
Tbaseplate = 85°C
Tjc = 26°C/W
Tchannel = 134°C
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