參數(shù)資料
型號(hào): AMIS-30660
元件分類: CAN
英文描述: High Speed CAN Transceiver
中文描述: 高速CAN收發(fā)器
文件頁數(shù): 6/11頁
文件大?。?/td> 653K
代理商: AMIS-30660
AMIS-30660 High Speed CAN Transceiver
Data Sheet
AMI Semiconductor
www.amis.com
6
8.0 Electrical Characteristics
Symbol
VCC
VCANH
Parameter
Supply voltage
DC voltage at pin CANH
Conditions
Min
-0.3
-45
*
Max
+7
+45
*
Unit
V
V
0 < VCC < 5.25V;
no time limit
0 < VCC < 5.25V;
no time limit
VCANL
DC voltage at pin CANL
-45
*
+45
*
V
VTXD
VRXD
Vref
VS
Vtran(CANH)
Vtran(CANL)
Vesd
DC voltage at pin TXD
DC voltage at pin RXD
DC voltage at pin Vref
DC voltage at pin S
Transient voltage at pin CANH
Transient voltage at pin CANL
Electrostatic discharge voltage
at all pins
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
-0.3
-0.3
-0.3
-0.3
-150
-150
-4000
-500
VCC+ 0.3
VCC + 0.3
VCC + 0.3
VCC + 0.3
+150
+150
+4000
+500
100
+150
+125
°C
V
V
V
V
V
V
V
V
mA
°C
°C
Note 1
Note 1
Note 2
Note 4
Note 3
Latch-up
Tstg
Tamb
Tjunc
-55
-40
+150
-40
Table 2 : Absolute maximum ratings
8.1 Definitions
All voltages are referenced to GND (pin 2).
Positive currents flow into the IC. Sinking current means
that the current is flowing into the pin. Sourcing current
means that the current is flowing out of the pin.
8.2 Absolute maximum ratings
Stresses above those listed in the following table may cause
permanent device failure. Exposure to absolute maximum
ratings for extended periods may effect device reliability.
* -85V min & +60V max also possible, please contact your local sales representative for details.
Notes
Note 1) Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and
3b (see Fig.4).
Note 2) Standardized Human Body Model ESD pulses in accordance to MIL883 method 3015.
Note 3) Static latch-up immunity: Static latch-up protection level when tested according to
EIA/JESD78.
Note 4) Standardized Charged Device Model ESD pulses when tested according to EOS/ESD
DS5.3-1993.
Thermal Characteristcs
Symbol
Rth(vj-a)
Parameter
Thermal resistance from junction to
ambient in SO8 package (2 layer PCB)
Thermal resistance from junction to
substrate of bare die
Conditions
In free air
Value
150
Unit
K/W
Rth(vj-s)
In free air
45
K/W
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