參數(shù)資料
型號: AMC0XXCFLKA
廠商: Advanced Micro Devices, Inc.
英文描述: 1, 2, 4, or 10 Megabyte 5.0 V-only Flash Memory PC Card
中文描述: 1,2,4,或10兆字節(jié)5.0 V型只有閃存PC卡
文件頁數(shù): 42/42頁
文件大小: 273K
代理商: AMC0XXCFLKA
42
AmC0XXCFLKA
5/4/98
DATA SHEET SUMMARY FOR AMC0XXCFLKA
PIN DESCRIPTION
Added description for REG pin.
Table 3. Even Byte Command Definitions
Each density card now has a list of paired segment
numbers. The address increment for Even bytes should
be (N/2) * 100000H.
Added Note 5 for clarification. Note 3 requires use of
CE1, not CE2, and A21. Note 2 was clarified.
Table 4. Odd Byte Command Definitions
Each density card now has a list of paired segment
numbers. The address increment for Even bytes should
be (N-1/2) * 100000H + 80000H.
Added Note 5 for clarification. Note 3 requires use of
CE2, not CE1, and A21. Note 2 was clarified.
Autoselect operation data is A4h.
Table 5. Word Command Definitions
Added Note 7 for clarification. Note 3 requires use of
CE1 and CE2 and A21. Note 5 was modified to reflect
that the address should be (Addr) + M * (100000H).
Note 2 was clarified.
Autoselect operation data is 0101/A4A4h.
Sector Erase
Clarified that any sector number can be loaded into the
sector erase buffer.
Toggle Bit—D6
Added clarification that D6 is used for entering Sector
Erase Suspend mode.
Sector Erase Suspend
Repeated sentence was deleted.
Write Operation Status Table
D3 in ‘Exceeded Time Limit’ mode is 0.
Figure 5. AC Waveforms for Data Polling During
Embedded Algorithm Operations
Corrected t
WHWH3 or 4
. Removed erroneous t
OE
reference.
Figure 6. AC Waveforms for Toggle Bit During
Embedded Algorithm Operations
Clarified diagram.
Embedded Algorithm Flow Charts
Figures 6, 7, 11 references to 14
μ
s time outs were cor-
rected to 16
μ
s.
DC Characteristics—Byte-Wide Operation
Note 1 has been modified to show standby current is in-
creased by: 19 mA for 10 Mb, 7 mA for 4 Mb, 3 mA for
2Mb and 1 mA for 1 Mb card in TTL modes.
DC Characteristics—Word-Wide Operation
For CE, REG, WE, OE, I
IL
minimum is –300
μ
A. Note 1
has been modified to show standby current is in-
creased by: 18 mA for 10 Mb, 6 mA for 4 Mb, and 2 mA
for 2 Mb card in TTL modes.
AC Characteristics—Write/Erase/Program
Operations
t
WHWH4
applies to 64K Byte sectors. Note 1 was modi-
fied to exclude the statement regarding preprogram-
ming time.
Figure 19. AC Waveforms for Byte Write Operations
t
WHWH1
is now t
WHWH3
. The Unlock address was
changed to AAAAh according to the Byte Write se-
quence. Added t.
AC Characteristics—Alternate CE Controlled
Writes—Write/Erase/Program Operations
t
WHWH4
applies to 64K Byte sectors. Note 1 was modi-
fied to exclude the statement regarding preprogram-
ming time.
Figure 20. Alternate CE Controlled Byte Write
Operation Timings
Added t
VCS
and t
EHEH3 or 4
to Figure 18.
Table 10. AMD’s CIS for AmC0XXCFLKA
Removed bracketed reference for Tuple Address 04h.
Tuple Address 32h now reflects CIS memory speed of
250 ns (3Ah).
Revision B+1
Sector Erase Suspend
Removed the statement requiring the address of a sec-
tor not being erased for valid D6 status.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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