參數(shù)資料
型號(hào)： AM50DL128CG70IT
廠商： ADVANCED MICRO DEVICES INC
元件分類： 存儲(chǔ)器
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA88
封裝： 11.60 X 8 MM, FBGA-88
文件頁(yè)數(shù)： 42/63頁(yè)
文件大?。?/td> 464K
代理商： AM50DL128CG70IT
November 7, 2002
Am50DL128CG
41
P R E L I M I N A R Y
FLASH AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 13 for test specifications
3. Measurements performed by placing a 50
termination on the data pin with a bias of V
CC
/2. The time from OE# high to the
data bus driven to V
CC
/2 is taken as t
DF
.
Note:
CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash
device must be held high during this operation.
Figure 15.
Read Operation Timings
Parameter
Description
Test Setup
Speed
JEDEC
Std.
70
85
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
85
ns
t
AVQV
t
ACC
Address to Output Delay
CE#f, OE# = V
IL
Max
70
85
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
70
85
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
40
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Notes 1, 3)
Max
30
35
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Notes 1, 3)
Max
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE#f or
OE#, Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#f
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
ACC
t
RC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
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