參數(shù)資料
型號(hào)： AM50DL128CG70IT
廠商： ADVANCED MICRO DEVICES INC
元件分類： 存儲(chǔ)器
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA88
封裝： 11.60 X 8 MM, FBGA-88
文件頁(yè)數(shù)： 25/63頁(yè)
文件大?。?/td> 464K
代理商： AM50DL128CG70IT
24
Am50DL128CG
November 7, 2002
P R E L I M I N A R Y
Table 9.
Device Geometry Definition
Addresses
(Word Mode)
Data
Description
27h
0017h
Device Size = 2
N
byte
28h
29h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
相關(guān)PDF資料
PDF描述
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