參數(shù)資料
型號(hào): AM42DL640AG
英文描述: 200NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
中文描述: Am42DL640AG -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 38/60頁
文件大?。?/td> 956K
代理商: AM42DL640AG
March 4, 2002
Am42DL16x2D
37
P R E L I M I N A R Y
TEST CONDITIONS
Table 17.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
70, 85 ns
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement reference
levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
2.0 V
0.0 V
1.0 V
1.0 V
Output
Measurement Level
Input
Figure 12.
Input Waveforms and Measurement Levels
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AM42DL640AG35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42DL640AG40IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42DL640AG45IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM