參數(shù)資料
型號(hào): AM41PDS3224DT11IT
廠商: SPANSION LLC
元件分類(lèi): 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁(yè)數(shù): 44/59頁(yè)
文件大?。?/td> 1072K
代理商: AM41PDS3224DT11IT
48
Am41PDS3224D
May 13, 2002
P R E L IMINARY
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
Speed Options
Unit
JEDEC
Std
Description
10
11
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to CE#f Low During Toggle
Bit Polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
60
ns
t
AHT
Address Hold time from CE#f or OE# High During
Toggle Bit Polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
60
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE#f Pulse Width
Min
60
ns
t
EHEL
t
CPH
CE#f Pulse Width High
Min
60
ns
tWHWH1
Programming Operation (Note 2)
Typ
16
s
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
5
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
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