參數(shù)資料
型號： AM42-0040
元件分類： 放大器
英文描述： 5900 MHz - 6400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝： HERMETIC SEALED, CERAMIC, CR-15, 10 PIN
文件頁數(shù)： 1/4頁
文件大小： 40K
代理商： AM42-0040
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Ordering Information
Part Number
Package
AM42-0040
Ceramic Bolt Down Package
Electrical Specifications: T
A = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Frequency = 5.9 to 6.4 GHz
Parameter
Abbv.
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
G
L
P
IN ≤ -10 dBm
dB
27
30
—
Input VSWR
VSWR
IN
P
IN ≤ -10 dBm
—
2.3:1
2.7:1
Output VSWR
VSWR
OUT
P
IN ≤ -10 dBm
—
3.0:1
—
Output Power
P
SAT
P
IN = +10 dBm, IDD=1050 mA Typ.
dBm
31.7
33.0
34.3
Output Power vs. Frequency
P
SAT
P
IN = +10 dBm, IDD=1050 mA Typ.
dB
—
1.0
1.5
Output Power vs. Temperature
(with respect to T
A=+25°C)
P
SAT
P
IN = +10 dBm, IDD=1050 mA Typ.
T
A= -40°C to +70°C
dB
—
±0.4
—
Drain Bias Current
I
DD
P
IN = +10 dBm
mA
900
1050
1100
Gate Bias VoltageV
GG
P
IN = +10 dBm, IDD=1050 mA Typ.
V
-2.4
-1.2
-0.4
Gate Bias Current
Ι
GG
P
IN = +10 dBm, IDD=1050 mA Typ.
mA
—
5
20
Thermal Resistance
θ
JC
25°C Heat Sink
°C/W
—
5.6
—
Second Harmonic
f
2
P
IN = +10 dBm, IDD=1050 mA Typ.
dBc
—
-35
—
Third Harmonic
f
3
P
IN = +10 dBm, IDD=1050 mA Typ.
dBc
—
-45
—
CR-15
Features
High Linear Gain: 30 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 26% Typ.
50 Input/Output Broadband Matched
High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0040 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0040 employs an internally matched monolithic chip
with internally decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.
The AM42-0040 is designed
for use as an output stage or
driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a
minimum of external components.
M/A-COM’s AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These
amplifiers are 100% RF tested to ensure compliance to
performance specifications.
GaAs MMIC VSAT Power Amplifier, 2W
5.9 - 6.4 GHz
AM42-0040
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM42-0040_1 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs MMIC VSAT Power Amplifier 2.0W 5.9 - 6.4GHz
AM42-0040_V5 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs MMIC VSAT Power Amplifier 2.0 W
AM42-0041 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs MMIC VSAT Power Amplifier, 0.5 W 14.0 - 14.5 GHz
AM42-0046 制造商:M/A-COM Technology Solutions 功能描述:RF AMP CHIP SGL PWR AMP 7.1GHZ 10V 11PIN CR-15 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF & MW POWER AMPLIFIER
AM42-0054 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:1 Watt / 2 Watt L-Band Power Amplifier 1.435 - 1.525 GHz
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