參數(shù)資料
型號: AM42-0040
元件分類: 放大器
英文描述: 5900 MHz - 6400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: HERMETIC SEALED, CERAMIC, CR-15, 10 PIN
文件頁數(shù): 2/4頁
文件大小: 40K
代理商: AM42-0040
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Typical Bias Configuration
4,5,6,7
Absolute Maximum Ratings
1,2,3,4
Parameter
Absolute Maximum
Input Power
+23 dBm
V
DD
+12 Volts
V
GG
-3 Volts
V
DD - VGG
12 Volts
I
DD
1700 mA
Channel Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
1. Exceeding any one or a combination of these limits may cause
permanent damage.
2. Case Temperature (T
C) = +25°C.
3. Nominal bias is obtained by first connecting -2.4 volts to pin 5
(V
GG), followed by connecting +9 volts to pin 10 (VDD). Note se-
quence. Adjust V
GG for a drain current of 1050 mA typical.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc supply voltage will appear at the RF ports.
6. The dc resistance at the input and output ports is a short circuit.
No voltage is allowed on these ports.
7. For optimum IP
3 performance, the VDD bypass capacitors should
be placed within 0.5 inches of the V
DD leads.
Pin No.
Pin Name
Description
1
N/C
No Connection
2
GND
DC and RF Ground
3
RF In
RF Input
4
GND
DC and RF Ground
5V
GG
Gate Supply
6
N/C
No Connection
7
GND
DC and RF Ground
8
RF Out
RF Output
9
GND
DC and RF Ground
10
V
DD
Drain Supply
Pin Configuration
AM42-0040
F
3.3
F
0.01
F
1.0
3
RF IN
RF OUT
8
10
V
DD
V
GG
GND
2,4,7,9
5
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