參數(shù)資料
型號(hào): AM41LV3204MT10IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲(chǔ)器
英文描述: Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA69
封裝: 8 X 10 MM, 1.20 MM HEIGHT, FBGA-69
文件頁(yè)數(shù): 54/67頁(yè)
文件大?。?/td> 484K
代理商: AM41LV3204MT10IT
June 10, 2003
Am41LV3204M
53
P R E L I M I N A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
Parameter
Speed
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
15
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
11.8
μs
Single Word Program Operation (Note 2)
Typ
60
μs
Single Word Accelerated Programming Operation (Note
2)
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
RESET# High Time Before Write (Note 1)
Min
50
ns
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